Реферат: Математическое моделирование биполярных транзисторов типа p-n-p

gotoxy(col+39,row+6);

write(Ic);

Model(Ueb,Ucb,Ieb,Icb,Ib,Iy);

gotoxy(col+3,row+7);

write('[Ieb] ');

gotoxy(col+39,row+7);

write(Ieb);

gotoxy(col+3,row+8);

write('[Icb] ');

gotoxy(col+39,row+8);

write(Icb);

gotoxy(col+3,row+9);

write('[Ib] ');

gotoxy(col+39,row+9);

write(Ib);

gotoxy(col+3,row+10);

write('[Iy] ');

gotoxy(col+39,row+10);

write(Iy);

Ik:=Iy-Icb;

gotoxy(col+3,row+11);

write('[Ik] ');

gotoxy(col+39,row+11);

write(Ik);

Ie:=Iy+Ieb;

gotoxy(col+3,row+12);

write('[Ie] ');

gotoxy(col+39,row+12);

write(Ie);