Реферат: Математическое моделирование биполярных транзисторов типа p-n-p

gotoxy(col+39,row+3);

write(TNOM);

gotoxy(col+3,row+4);

write('[Current temperature (C)] ');

gotoxy(col+39,row+4);

write(T);

gotoxy(col+3,row+5);

write('[Emitter-Base voltage] ');

gotoxy(col+39,row+5);

write(Ueb);

gotoxy(col+3,row+6);

write('[Emitter-Collector voltage] ');

gotoxy(col+39,row+6);

write(Uec);

gotoxy(col+3,row+7);

write('[Collector-Base voltage] ');

gotoxy(col+39,row+7);

write(Ucb);

1: gotoxy(col+6,row+25);

write('Accept current parameters (Y/N) ');

an:=readkey;

case an of 'y': goto 3;

'Y': goto 3;

'n': goto 2;

'N': goto 2;

else

begin

sound(500);

delay(1000);