Реферат: Математическое моделирование биполярных транзисторов типа p-n-p

else

begin

sound(500);

delay(1000);

nosound;

goto 1;

end;

end;

2: clrscr;

gotoxy(col+25,row+1);

write('Input next parameters of transistor');

gotoxy(col+3,row+3);

write('[Forward beta] ');

gotoxy(col+40,row+3);

read(BF);

gotoxy(col+39,row+3);

write(BF);

gotoxy(col+3,row+4);

write('[Revers beta] ');

gotoxy(col+40,row+4);

read(BR);

gotoxy(col+39,row+4);

write(BR);

gotoxy(col+3,row+5);

write('[Temp. coef. of BETTA (PPM)] ');

gotoxy(col+40,row+5);

read(TCB);

gotoxy(col+39,row+5);

write(TCB);