Реферат: Математическое моделирование биполярных транзисторов типа p-n-p

EG:=EG*1.6e-19;

gotoxy(col+3,row+8);

write('[CJC0] ');

gotoxy(col+39,row+8);

write(CJC0);

gotoxy(col+3,row+9);

write('[CJE0] ');

gotoxy(col+39,row+9);

write(CJE0);

gotoxy(col+3,row+10);

write('[Base resistance] ');

gotoxy(col+39,row+10);

write(RB);

gotoxy(col+3,row+11);

write('[Collector resistance] ');

gotoxy(col+39,row+11);

write(RC);

gotoxy(col+3,row+12);

write('[Early Valtage] ');

gotoxy(col+39,row+12);

write(VA);

gotoxy(col+3,row+13);

write('[TAU forward] ');

gotoxy(col+39,row+13);

write(TAUF);

gotoxy(col+3,row+14);

write('[TAU reverse] ');

gotoxy(col+39,row+14);

write(TAUR);