Реферат: Математическое моделирование биполярных транзисторов типа p-n-p

write('[Saturation Current] ');

gotoxy(col+40,row+6);

read(Is0);

gotoxy(col+39,row+6);

write(Is0);

gotoxy(col+3,row+7);

write('[Energy gap (0.6 to 1.3)] ');

gotoxy(col+40,row+7);

read(EG);

gotoxy(col+39,row+7);

write(EG);

gotoxy(col+3,row+8);

write('[CJC0] ');

gotoxy(col+40,row+8);

read(CJC0);

gotoxy(col+39,row+8);

write(CJC0);

gotoxy(col+3,row+9);

write('[CJE0] ');

gotoxy(col+40,row+9);

read(CJE0);

gotoxy(col+39,row+9);

write(CJE0);

gotoxy(col+3,row+10);

write('[Base resistance] ');

gotoxy(col+40,row+10);

read(RB);

gotoxy(col+39,row+10);

write(RB);