Реферат: Математическое моделирование биполярных транзисторов типа p-n-p

write('[MJC] ');

gotoxy(col+39,row+15);

write(MJC);

gotoxy(col+3,row+16);

write('[VJC] ');

gotoxy(col+39,row+16);

write(VJC);

gotoxy(col+3,row+17);

write('[MJE] ');

gotoxy(col+39,row+17);

write(MJE);

gotoxy(col+3,row+18);

write('[VJE] ');

gotoxy(col+39,row+18);

write(VJE);

gotoxy(col+3,row+19);

write('[CSUB] ');

gotoxy(col+39,row+19);

write(CCS);

gotoxy(col+3,row+20);

write('[Minimum junction resistance] ');

gotoxy(col+39,row+20);

write(RJ);

gotoxy(col+6,row+25);

write('Accept parameters of transistor (Y/N) ');

an:=readkey;

case an of 'y': goto 3;

'Y': goto 3;

'n': goto 2;