Реферат: Математическое моделирование биполярных транзисторов типа p-n-p

VA:=102;

TAUF:=9.4e-11;

TAUR:=6.692e-8;

MJC:=0.33;

VJC:=0.65;

MJE:=0.69;

VJE:=0.69;

CCS:=1e-12;

RJ:=0.01;

writeln(' It is default parameters of transistor KT316B (Y/N) ');

gotoxy(col+3,row+3);

write('[Forward beta] ');

gotoxy(col+39,row+3);

write(BF);

gotoxy(col+3,row+4);

write('[Revers beta] ');

gotoxy(col+39,row+4);

write(BR);

gotoxy(col+3,row+5);

write('[Temp. coef. of BETTA (PPM)] ');

gotoxy(col+39,row+5);

write(TCB);

gotoxy(col+3,row+6);

write('[Saturation Current] ');

gotoxy(col+39,row+6);

write(Is0);

gotoxy(col+3,row+7);

write('[Energy gap (0.6 to 1.3)] ');

gotoxy(col+39,row+7);